Revealing submicron chemical analysis of contamination and defects
Join Dr. Solehah Jasmee, Senior Engineer at the MIMOS Failure Analysis Lab, for an upcoming webinar exploring how submicron IR (O-PTIR) spectroscopy is enabling advanced semiconductor failure analysis through sub-micron chemical characterization of contamination, defects, residues, and challenging microelectronic features.
Unlike traditional FTIR methods that often require contact with an ATR crystal or impose constraints on sample geometry, O-PTIR is a non-contact, reflection-mode technique that enables high-resolution IR chemical analysis directly from the sample surface. With sub-micron spatial resolution and multimodal capabilities, O-PTIR can provide complementary chemical, optical, and Raman information from the same region of interest, helping analysts better understand complex failure mechanisms.
In this webinar, you’ll learn how O-PTIR can help with:
- Non-contact chemical analysis without the need for ATR contact with FTIR trans/ATR like spectra
- Reflection-mode analysis of semiconductor samples and microelectronic devices
- Sub-micron identification of particles, residues, films, and localized defects
- Multimodal characterization combining IR, Fluorescence imaging, optical imaging, and Raman capabilities
- Improved root-cause analysis of contamination and defect-related failures
Who should attend:
- Semiconductor failure analysis engineers
- Process engineers
- Materials characterization scientists
- Analytical lab teams
- Quality and reliability engineers
- and anyone working on contamination control, yield improvement, or root-cause analysis in microelectronics.