FULL PUBLICATION
“With O-PTIR spectroscopy, its sub-micron spatial resolution and enhanced sensitivity towards small or thin regions of interest has enabled flexibility for selecting either cross-section or pry-off analysis for semiconductor failure analysis samples”
Reporting in a recent technical publication, researchers at Micron Semiconductor demonstrate how optical photothermal infrared (O-PTIR) spectroscopy revolutionizes failure and contamination analysis in challenging microelectronics applications.
The semiconductor industry faces critical analytical challenges when dealing with sub-surface defects, small particles, and thin contamination layers that traditional FT-IR microscopy cannot adequately characterize due to spatial resolution limitations and insufficient sensitivity for features smaller than 10 μm. The research presents compelling case studies showcasing O-PTIR’s superior performance.
In cross-sectional analysis of sub-surface delamination, the technique successfully identified multiple contamination sources including resin acrylic emulsion from underfill materials and cellulosic particles from sample preparation.
The enhanced sensitivity enabled analysis of contamination layers less than 10 μm wide while preserving spatial localization information that would be lost with conventional approaches. Spectral de-mixing analysis confirmed the presence of polymer resins and surfactants with unprecedented detail.
For isolated particulate analysis on bare dies, O-PTIR demonstrated remarkable capabilities in characterizing sub-10 μm particles that appear morphologically similar but possess vastly different chemical compositions.
The technique successfully identified silica-based particles containing surfactants and urethane-based materials with normal infrared spectral band shapes, avoiding the derivative distortions and scattering artifacts that plague conventional FT-IR measurements of small particles.
The study establishes O-PTIR as a transformative analytical tool that eliminates traditional analytical dilemmas in semiconductor failure analysis. With sub-micron spatial resolution, enhanced sensitivity achieving femtogram-level detection, and compatibility with standard sample preparation protocols, O-PTIR enables flexible analytical strategies while providing highly confident chemical identification.
This breakthrough capability allows semiconductor manufacturers to mitigate challenging failure and contamination situations, ultimately leading to improved product yield and reduced costs.
Authors: Angelina Lau1, Peng Hui Tan1, Michael K. F. Lo2
1) Micron Semiconductor Asia Operation, Singapore, 2) Photothermal Spectroscopy Corp.
